ON Semiconductor FDD5612

FDD5612 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD561
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 10V
Rds On (Max) @ Id, Vgs:
55mOhm @ 5.4A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
660pF @ 30V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-252-3
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.4A (Ta)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 42W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDD5612. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 60v 5.4a (ta) 3.8w (ta), 42w (tc) surface mount to-252-3. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fdd561. The maximum gate charge and given voltages include 11nc @ 10v. It has a maximum Rds On and voltage of 55mohm @ 5.4a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 660pf @ 30v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. to-252-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.4a (ta). The product carries maximum power dissipation 3.8w (ta), 42w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev 13/Aug/2020(PCN Assembly/Origin)
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FDD5612(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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