ON Semiconductor FDC699P

ON Semiconductor

Product Information

Detailed Description:
P-Channel 20V 7A (Ta) 2W (Ta) Surface Mount SuperSOT™-6 FLMP
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-SSOT Flat-lead, SuperSOT™-6 FLMP
Base Part Number:
FDC699
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 5V
Rds On (Max) @ Id, Vgs:
22mOhm @ 7A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
2640pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6 FLMP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Customer Reference:
Power Dissipation (Max):
2W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDC699P. It features p-channel 20v 7a (ta) 2w (ta) surface mount supersot™-6 flmp. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ssot flat-lead, supersot™-6 flmp. Base Part Number: fdc699. The maximum gate charge and given voltages include 38nc @ 5v. It has a maximum Rds On and voltage of 22mohm @ 7a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 2640pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. supersot™-6 flmp is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7a (ta). The product carries maximum power dissipation 2w (ta). This product use mosfet (metal oxide) technology.

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FDC699P(Datasheets)
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Mold Compound 27/March/2008(PCN Design/Specification)

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