Maximum Continuous Drain Current:
240 A
Width:
11.78mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
H-PSOF
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
47 nC @ 10 V
Channel Type:
N
Length:
9.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Maximum Gate Source Voltage:
±20 V
Height:
2.4mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.25V
Maximum Drain Source Resistance:
4.1 mΩ
Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
N-Channel 100V 185A (Tc) 300W (Ta) Surface Mount 8-HPSOF
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerSFN
Base Part Number:
FDBL86066
Gate Charge (Qg) (Max) @ Vgs:
69nC @ 10V
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3240pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-HPSOF
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
185A (Tc)
Customer Reference:
Power Dissipation (Max):
300W (Ta)
Technology:
MOSFET (Metal Oxide)
