Maximum Continuous Drain Current:
52 A
Transistor Material:
Si
Width:
10.16mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Channel Type:
N
Length:
9.98mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
357 W
Series:
UniFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.572mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
49 mΩ
Manufacturer Standard Lead Time:
50 Weeks
Detailed Description:
N-Channel 200V 52A (Tc) 357W (Tc) Surface Mount D²PAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB52N20
Gate Charge (Qg) (Max) @ Vgs:
63nC @ 10V
Rds On (Max) @ Id, Vgs:
49mOhm @ 26A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2900pF @ 25V
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
D²PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Customer Reference:
Power Dissipation (Max):
357W (Tc)
Technology:
MOSFET (Metal Oxide)
