Maximum Drain Source Voltage:
250 V
Typical Gate Charge @ Vgs:
47 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
307 W
Series:
UniFET
Maximum Drain Source Resistance:
69 mΩ
Height:
4.83mm
Width:
11.33mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
3V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
44 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
39 Weeks
Detailed Description:
N-Channel 250V 44A (Tc) 307W (Tc) Surface Mount D²PAK
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB44N25
Gate Charge (Qg) (Max) @ Vgs:
61nC @ 10V
Rds On (Max) @ Id, Vgs:
69mOhm @ 22A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2870pF @ 25V
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
D²PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
44A (Tc)
Customer Reference:
Power Dissipation (Max):
307W (Tc)
Technology:
MOSFET (Metal Oxide)
