ON Semiconductor FDB3860

ON Semiconductor

Product Information

Detailed Description:
N-Channel 100V 6.4A (Ta), 30A (Tc) 3.1W (Ta), 71W (Tc) Surface Mount TO-263AB
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB386
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Rds On (Max) @ Id, Vgs:
37mOhm @ 5.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1740pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263AB
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.4A (Ta), 30A (Tc)
Customer Reference:
Power Dissipation (Max):
3.1W (Ta), 71W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDB3860. It features n-channel 100v 6.4a (ta), 30a (tc) 3.1w (ta), 71w (tc) surface mount to-263ab. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fdb386. The maximum gate charge and given voltages include 30nc @ 10v. It has a maximum Rds On and voltage of 37mohm @ 5.9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1740pf @ 50v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. to-263ab is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6.4a (ta), 30a (tc). The product carries maximum power dissipation 3.1w (ta), 71w (tc). This product use mosfet (metal oxide) technology.

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Multiple Devices 27/Feb/2012(PCN Obsolescence/ EOL)
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FDB3860(Datasheets)

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