ON Semiconductor FDB10AN06A0

ON Semiconductor

Product Information

Detailed Description:
N-Channel 60V 12A (Ta), 75A (Tc) 135W (Tc) Surface Mount TO-263AB
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB10
Gate Charge (Qg) (Max) @ Vgs:
37nC @ 10V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1840pF @ 25V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263AB
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 75A (Tc)
Customer Reference:
Power Dissipation (Max):
135W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDB10AN06A0. It features n-channel 60v 12a (ta), 75a (tc) 135w (tc) surface mount to-263ab. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fdb10. The maximum gate charge and given voltages include 37nc @ 10v. It has a maximum Rds On and voltage of 10.5mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1840pf @ 25v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. to-263ab is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 12a (ta), 75a (tc). The product carries maximum power dissipation 135w (tc). This product use mosfet (metal oxide) technology.

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FDB10AN06A0, FDP10AN06A0(Datasheets)

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