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ON Semiconductor FDB045AN08A0

FDB045AN08A0 ON Semiconductor
FDB045AN08A0
FDB045AN08A0
ON Semiconductor

Product Information

Category:
Power MOSFET
Dimensions:
10.67 x 11.33 x 4.83mm
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Drain Source Resistance:
11 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
92 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6600 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
310 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 75V 19A (Ta), 90A (Tc) 310W (Tc) Surface Mount D²PAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB045
Gate Charge (Qg) (Max) @ Vgs:
138nC @ 10V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 80A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
75V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6600pF @ 25V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
D²PAK
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 90A (Tc)
Customer Reference:
Power Dissipation (Max):
310W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDB045AN08A0. It is of power mosfet category . The given dimensions of the product include 10.67 x 11.33 x 4.83mm. While 90 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.33mm wide. The product offers single transistor configuration. It has a maximum of 75 v drain source voltage. It provides up to 11 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 92 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 6600 pf@ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 40 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 310 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. In addition, it has a typical 18 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 75v 19a (ta), 90a (tc) 310w (tc) surface mount d²pak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fdb045. The maximum gate charge and given voltages include 138nc @ 10v. It has a maximum Rds On and voltage of 4.5mohm @ 80a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 75v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6600pf @ 25v. The product powertrench®, is a highly preferred choice for users. d²pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 19a (ta), 90a (tc). The product carries maximum power dissipation 310w (tc). This product use mosfet (metal oxide) technology.

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FDB045AN08A0, PowerTrench 75V N-Channel MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assem/Test Add 25/Jul/2019(PCN Assembly/Origin)
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FDB045AN08A0 Datasheet(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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FAQs

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You can order ON Semiconductor brand products with FDB045AN08A0 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
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You will get a confirmation email regarding your order of ON Semiconductor FDB045AN08A0. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FDB045AN08A0.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14518446 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14518446.
Yes. We ship FDB045AN08A0 Internationally to many countries around the world.