Maximum Continuous Drain Current:
229 A
Transistor Material:
Si
Width:
9.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
137 nC @ 40 V
Channel Type:
N
Length:
10.2mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
246 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.4 mΩ
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 80V 120A (Tc) 246W (Tc) Surface Mount TO-263-7
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Base Part Number:
FDB024
Gate Charge (Qg) (Max) @ Vgs:
178nC @ 10V
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
13530pF @ 40V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263-7
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Customer Reference:
Power Dissipation (Max):
246W (Tc)
Technology:
MOSFET (Metal Oxide)
