ON Semiconductor FDB016N04AL7
Product Information
Category:
Power MOSFET
Dimensions:
10.2 x 9.4 x 4.7mm
Maximum Continuous Drain Current:
306 A
Transistor Material:
Si
Width:
9.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
129 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
8715 pF @ 25 V
Length:
10.2mm
Pin Count:
7
Typical Turn-Off Delay Time:
118 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
283 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.7mm
Typical Turn-On Delay Time:
21 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.16 mΩ
Detailed Description:
N-Channel 40V 160A (Tc) 283W (Tc) Surface Mount TO-263-7
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Base Part Number:
FDB016
Gate Charge (Qg) (Max) @ Vgs:
167nC @ 10V
Rds On (Max) @ Id, Vgs:
1.6mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11600pF @ 25V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263-7
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Customer Reference:
Power Dissipation (Max):
283W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship FDB016N04AL7 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDB016N04AL7. It is of power mosfet category . The given dimensions of the product include 10.2 x 9.4 x 4.7mm. While 306 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.4mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 129 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 8715 pf @ 25 v . Its accurate length is 10.2mm. It contains 7 pins. Whereas, its typical turn-off delay time is about 118 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 283 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.7mm. In addition, it has a typical 21 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.16 mω maximum drain source resistance. It features n-channel 40v 160a (tc) 283w (tc) surface mount to-263-7. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-7, d²pak (6 leads + tab). Base Part Number: fdb016. The maximum gate charge and given voltages include 167nc @ 10v. It has a maximum Rds On and voltage of 1.6mohm @ 80a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 11600pf @ 25v. The product powertrench®, is a highly preferred choice for users. to-263-7 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 160a (tc). The product carries maximum power dissipation 283w (tc). This product use mosfet (metal oxide) technology.
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