Category:
Power MOSFET
Dimensions:
10.2 x 9.4 x 4.7mm
Maximum Continuous Drain Current:
306 A
Transistor Material:
Si
Width:
9.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
129 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
8715 pF @ 25 V
Length:
10.2mm
Pin Count:
7
Typical Turn-Off Delay Time:
118 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
283 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.7mm
Typical Turn-On Delay Time:
21 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.16 mΩ
Detailed Description:
N-Channel 40V 160A (Tc) 283W (Tc) Surface Mount TO-263-7
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Base Part Number:
FDB016
Gate Charge (Qg) (Max) @ Vgs:
167nC @ 10V
Rds On (Max) @ Id, Vgs:
1.6mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11600pF @ 25V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263-7
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Customer Reference:
Power Dissipation (Max):
283W (Tc)
Technology:
MOSFET (Metal Oxide)
