ON Semiconductor FDA69N25
Product Information
Maximum Continuous Drain Current:
69 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
77 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
480 W
Series:
UniFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
41 mΩ
Manufacturer Standard Lead Time:
34 Weeks
Detailed Description:
N-Channel 250V 69A (Tc) 480W (Tc) Through Hole TO-3PN
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Base Part Number:
FDA69
Gate Charge (Qg) (Max) @ Vgs:
100nC @ 10V
Rds On (Max) @ Id, Vgs:
41mOhm @ 34.5A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
4640pF @ 25V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-3PN
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
69A (Tc)
Customer Reference:
Power Dissipation (Max):
480W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14518420 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14518420.
Yes. We ship FDA69N25 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDA69N25. While 69 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 77 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 480 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 41 mω maximum drain source resistance. It has typical 34 weeks of manufacturer standard lead time. It features n-channel 250v 69a (tc) 480w (tc) through hole to-3pn. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. Base Part Number: fda69. The maximum gate charge and given voltages include 100nc @ 10v. It has a maximum Rds On and voltage of 41mohm @ 34.5a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 250v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 4640pf @ 25v. The product unifet™, is a highly preferred choice for users. to-3pn is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 69a (tc). The product carries maximum power dissipation 480w (tc). This product use mosfet (metal oxide) technology.
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