Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
239 W
Series:
UniFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
18.9mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
265 mΩ
Manufacturer Standard Lead Time:
34 Weeks
Detailed Description:
N-Channel 500V 19A (Tc) 239W (Tc) Through Hole TO-3PN
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Base Part Number:
FDA18
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 10V
Rds On (Max) @ Id, Vgs:
265mOhm @ 9.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2860pF @ 25V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-3PN
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Customer Reference:
Power Dissipation (Max):
239W (Tc)
Technology:
MOSFET (Metal Oxide)
