Category:
Power MOSFET
Dimensions:
6.8 x 2.5 x 6.3mm
Maximum Continuous Drain Current:
6 A
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
465 pF @ 400 V
Length:
6.8mm
Pin Count:
3
Forward Transconductance:
3.6S
Typical Turn-Off Delay Time:
29 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
54 W
Maximum Gate Source Voltage:
±30 V
Height:
6.3mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
600 mΩ
Manufacturer Standard Lead Time:
50 Weeks
Detailed Description:
N-Channel 650V 6A (Tc) 54W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
4.5V @ 600µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Stub Leads, IPak
Base Part Number:
FCU600
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
465pF @ 400V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Customer Reference:
Power Dissipation (Max):
54W (Tc)
Technology:
MOSFET (Metal Oxide)
