ON Semiconductor FCPF7N60NT

FCPF7N60NT ON Semiconductor
FCPF7N60NT
FCPF7N60NT
ET14518381
ET14518381
Transistors - FETs, MOSFETs - Single
Transistors - FETs, MOSFETs - Single
ON Semiconductor

Product Information

Category:
High Voltage
Dimensions:
10.36 x 4.9 x 16.07mm
Maximum Continuous Drain Current:
6.8 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Drain Source Resistance:
520 mΩ
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17.8 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
719 pF @ 100 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
35 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
30.5 W
Series:
SupreMOS
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.07mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 600V 6.8A (Tc) 30.5W (Tc) Through Hole TO-220F-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FCPF7
Gate Charge (Qg) (Max) @ Vgs:
35.6nC @ 10V
Rds On (Max) @ Id, Vgs:
520mOhm @ 3.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
960pF @ 100V
Mounting Type:
Through Hole
Series:
SupreMOS™
Supplier Device Package:
TO-220F-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
6.8A (Tc)
Customer Reference:
Power Dissipation (Max):
30.5W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCPF7N60NT. It is of high voltage category . The given dimensions of the product include 10.36 x 4.9 x 16.07mm. While 6.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. It provides up to 520 mω maximum drain source resistance. The package is a sort of to-220f. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 719 pf @ 100 v . Its accurate length is 10.36mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 35 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 30.5 w maximum power dissipation. The product supremos, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.07mm. In addition, it has a typical 12 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It has typical 27 weeks of manufacturer standard lead time. It features n-channel 600v 6.8a (tc) 30.5w (tc) through hole to-220f-3. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Base Part Number: fcpf7. The maximum gate charge and given voltages include 35.6nc @ 10v. It has a maximum Rds On and voltage of 520mohm @ 3.4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 960pf @ 100v. The product supremos™, is a highly preferred choice for users. to-220f-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 6.8a (tc). The product carries maximum power dissipation 30.5w (tc). This product use mosfet (metal oxide) technology.

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FCPF7N60NT, N-Channel MOSFET 600V 6.8A 0.52 Ohm Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mold Compound Change 25/Sep/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FCPF7N60NT(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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