ON Semiconductor FCPF380N65FL1
Product Information
Detailed Description:
N-Channel 650V 10.2A (Tc) 33W (Tc) Through Hole TO-220F
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FCPF380
Gate Charge (Qg) (Max) @ Vgs:
43nC @ 10V
Rds On (Max) @ Id, Vgs:
380mOhm @ 5.1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1680pF @ 100V
Mounting Type:
Through Hole
Series:
FRFET®, SuperFET® II
Supplier Device Package:
TO-220F
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
10.2A (Tc)
Customer Reference:
Power Dissipation (Max):
33W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship FCPF380N65FL1 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FCPF380N65FL1. It features n-channel 650v 10.2a (tc) 33w (tc) through hole to-220f. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Base Part Number: fcpf380. The maximum gate charge and given voltages include 43nc @ 10v. It has a maximum Rds On and voltage of 380mohm @ 5.1a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1680pf @ 100v. The product is available in through hole configuration. The product frfet®, superfet® ii, is a highly preferred choice for users. to-220f is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 10.2a (tc). The product carries maximum power dissipation 33w (tc). This product use mosfet (metal oxide) technology.
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