Dimensions:
10.36 x 4.9 x 16.07mm
Maximum Continuous Drain Current:
36 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
86 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3595 pF @ 100 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
94 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Gate Source Voltage:
-30 V, +30 V
Series:
SupreMOS
Height:
16.07mm
Typical Turn-On Delay Time:
23 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
81 mΩ
Manufacturer Standard Lead Time:
41 Weeks
Detailed Description:
N-Channel 600V 36A (Tc) Through Hole TO-220F-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FCPF36
Gate Charge (Qg) (Max) @ Vgs:
112nC @ 10V
Rds On (Max) @ Id, Vgs:
90mOhm @ 18A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
4785pF @ 100V
Mounting Type:
Through Hole
Series:
SupreMOS™
Supplier Device Package:
TO-220F-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Customer Reference:
Technology:
MOSFET (Metal Oxide)
