ON Semiconductor FCP190N65S3
Product Information
Maximum Continuous Drain Current:
17 A
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
144 W
Maximum Gate Source Voltage:
±30 V
Height:
16.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
190 mΩ
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 650V 17A (Tc) 144W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
4.5V @ 1.7mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FCP190
Gate Charge (Qg) (Max) @ Vgs:
33nC @ 10V
Rds On (Max) @ Id, Vgs:
190mOhm @ 8.5A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1350pF @ 400V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-220-3
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Customer Reference:
Power Dissipation (Max):
144W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FCP190N65S3. While 17 a of maximum continuous drain current. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 33 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 144 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 16.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 190 mω maximum drain source resistance. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 650v 17a (tc) 144w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 4.5v @ 1.7ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fcp190. The maximum gate charge and given voltages include 33nc @ 10v. It has a maximum Rds On and voltage of 190mohm @ 8.5a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1350pf @ 400v. The product superfet® iii, is a highly preferred choice for users. to-220-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 17a (tc). The product carries maximum power dissipation 144w (tc). This product use mosfet (metal oxide) technology.
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