Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Drain Source Resistance:
900 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
543 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
33.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Series:
SuperFET II
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.22mm
Typical Turn-On Delay Time:
10.9 ns
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 600V 4.5A (Tc) 52W (Tc) Surface Mount TO-252, (D-Pak)
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FCD90
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Rds On (Max) @ Id, Vgs:
900mOhm @ 2.3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
720pF @ 25V
Mounting Type:
Surface Mount
Series:
SuperFET® II
Supplier Device Package:
TO-252, (D-Pak)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Customer Reference:
Power Dissipation (Max):
52W (Tc)
Technology:
MOSFET (Metal Oxide)
