Category:
Power MOSFET
Dimensions:
15.8 x 5 x 20.1mm
Maximum Continuous Drain Current:
76 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Drain Source Resistance:
36 Ω
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
218 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
9310 pF@ 100 V
Length:
15.8mm
Pin Count:
3
Typical Turn-Off Delay Time:
235 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
543 W
Series:
SupreMOS
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.1mm
Typical Turn-On Delay Time:
34 ns
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
10 Weeks
Detailed Description:
N-Channel 600V 76A (Tc) 543W (Tc) Through Hole TO-3PN
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Base Part Number:
FCA76N60
Gate Charge (Qg) (Max) @ Vgs:
285nC @ 10V
Rds On (Max) @ Id, Vgs:
36mOhm @ 38A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
12385pF @ 100V
Mounting Type:
Through Hole
Series:
SupreMOS™
Supplier Device Package:
TO-3PN
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
76A (Tc)
Customer Reference:
Power Dissipation (Max):
543W (Tc)
Technology:
MOSFET (Metal Oxide)
