Priced to Clear:
Yes
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
25 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.9mm
Width:
2.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
39 mΩ
Package Type:
ECH
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
9.5 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Base Part Number:
ECH8320
Detailed Description:
P-Channel 20V 9.5A (Ta) 1.6W (Ta) Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
2300pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 5A, 4.5V
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Supplier Device Package:
8-ECH
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-SMD, Flat Lead
Power Dissipation (Max):
1.6W (Ta)
Current - Continuous Drain (Id) @ 25°C:
9.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
