Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
35 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
CPH
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Length:
2.9mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
73 mΩ
Manufacturer Standard Lead Time:
19 Weeks
Detailed Description:
N-Channel 35V 6A (Ta) 1.6W (Ta) Surface Mount 6-CPH
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
CPH6443
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Rds On (Max) @ Id, Vgs:
37mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
35V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
470pF @ 20V
Mounting Type:
Surface Mount
Supplier Device Package:
6-CPH
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Customer Reference:
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
