Maximum Drain Source Voltage:
50 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
1mm
Width:
1.4mm
Length:
3mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOT-23 (TO-236AB)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
130 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
10 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
50 Weeks
Detailed Description:
P-Channel 50V 130mA (Ta) 360mW (Ta) Surface Mount SOT-23-3
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
BSS84
Gate Charge (Qg) (Max) @ Vgs:
1.3nC @ 5V
Rds On (Max) @ Id, Vgs:
10Ohm @ 100mA, 5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
73pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
130mA (Ta)
Customer Reference:
Power Dissipation (Max):
360mW (Ta)
Technology:
MOSFET (Metal Oxide)
