Maximum Drain Source Voltage:
50 V
Typical Gate Charge @ Vgs:
2.4 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Minimum Gate Threshold Voltage:
0.6V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
220 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
2.5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
N-Channel 50V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
BSS138
Gate Charge (Qg) (Max) @ Vgs:
2.4nC @ 10V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 50mA, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 2.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
58pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
220mA (Ta)
Customer Reference:
Power Dissipation (Max):
350mW (Ta)
Technology:
MOSFET (Metal Oxide)
