Maximum Continuous Drain Current:
220 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.7 nC @ 10 V
Channel Type:
N
Length:
2.92mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
360 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.93mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.5 Ω
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 50V 220mA (Ta) 360mW (Ta) Surface Mount SOT-23-3
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
BSS138
Gate Charge (Qg) (Max) @ Vgs:
2.4nC @ 10V
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 220mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
27pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
220mA (Ta)
Customer Reference:
Power Dissipation (Max):
360mW (Ta)
Technology:
MOSFET (Metal Oxide)
