ON Semiconductor BS107ARL1G

ON Semiconductor

Product Information

Base Part Number:
BS107
Detailed Description:
N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92-3
Input Capacitance (Ciss) (Max) @ Vds:
60pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3V @ 1mA
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.4Ohm @ 250mA, 10V
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Power Dissipation (Max):
350mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
250mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is BS107ARL1G. Base Part Number: bs107. It features n-channel 200v 250ma (ta) 350mw (ta) through hole to-92-3. The product's input capacitance at maximum includes 60pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It has a maximum Rds On and voltage of 6.4ohm @ 250ma, 10v. to-92-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The product carries maximum power dissipation 350mw (ta). The continuous current drain at 25°C is 250ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 08/Nov/2014(PCN Obsolescence/ EOL)
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Multiple Devices Revision 26/Nov/2014(PCN Obsolescence/ EOL)
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BS107, BS107A(Datasheets)

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