Category:
Power MOSFET
Dimensions:
1.4 x 0.8 x 0.6mm
Maximum Continuous Drain Current:
70 mA
Transistor Material:
Si
Width:
0.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Maximum Gate Threshold Voltage:
1.4V
Maximum Drain Source Resistance:
60 Ω
Package Type:
SSFP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.4 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
7.4 pF @ -10 V
Length:
1.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
160 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.6mm
Typical Turn-On Delay Time:
20 ns
Base Part Number:
5LP01
Detailed Description:
P-Channel 50V 70mA (Ta) 150mW (Ta) Surface Mount 3-SSFP
Input Capacitance (Ciss) (Max) @ Vds:
7.4pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
23Ohm @ 40mA, 4V
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
1.4nC @ 10V
Supplier Device Package:
3-SSFP
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SC-81
Power Dissipation (Max):
150mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
70mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
