ON Semiconductor 5LN01C-TB-H

ON Semiconductor

Product Information

Base Part Number:
5LN01
Detailed Description:
N-Channel 50V 100mA (Ta) 250mW (Ta) Surface Mount 3-CP
Input Capacitance (Ciss) (Max) @ Vds:
6.6pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
7.8Ohm @ 50mA, 4V
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
1.57nC @ 10V
Supplier Device Package:
3-CP
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
250mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 5LN01C-TB-H. Base Part Number: 5ln01. It features n-channel 50v 100ma (ta) 250mw (ta) surface mount 3-cp. The product's input capacitance at maximum includes 6.6pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 7.8ohm @ 50ma, 4v. The product has a 50v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 1.57nc @ 10v. 3-cp is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 250mw (ta). The continuous current drain at 25°C is 100ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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5LN01C(Datasheets)

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