ON Semiconductor 2SK4209

ON Semiconductor

Product Information

Base Part Number:
2SK4209
Detailed Description:
N-Channel 800V 12A (Ta) 2.5W (Ta), 190W (Tc) Through Hole TO-3PB
Input Capacitance (Ciss) (Max) @ Vds:
1500pF @ 30V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
75nC @ 10V
Rds On (Max) @ Id, Vgs:
1.08Ohm @ 6A, 10V
Supplier Device Package:
TO-3PB
Packaging:
Tray
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Power Dissipation (Max):
2.5W (Ta), 190W (Tc)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2SK4209. Base Part Number: 2sk4209. It features n-channel 800v 12a (ta) 2.5w (ta), 190w (tc) through hole to-3pb. The product's input capacitance at maximum includes 1500pf @ 30v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has a 800v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 75nc @ 10v. It has a maximum Rds On and voltage of 1.08ohm @ 6a, 10v. to-3pb is the supplier device package value. In addition, tray is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-3p-3, sc-65-3. The product carries maximum power dissipation 2.5w (ta), 190w (tc). The continuous current drain at 25°C is 12a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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2SK4209(Datasheets)

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