Maximum Drain Source Voltage:
60 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-40 V, +40 V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
9 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2N7000
Detailed Description:
N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3V @ 1mA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Power Dissipation (Max):
400mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
