MOSFET N-Ch 60V 4A Enhancement SOT-223
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
9 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
180 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Rds On (Max) @ Id, Vgs:
100mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
250 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is MOSFET N-Ch 60V 4A Enhancement SOT-223 manufactured by Fairchild Semiconductor. The manufacturer part number is NDT3055. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 9 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.7mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. It provides up to 180 mω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. The maximum gate charge and given voltages include 15 nc @ 10 v. It has a maximum Rds On and voltage of 100mohm @ 4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 1.1w (ta). The product's input capacitance at maximum includes 250 pf @ 30 v. sot-223-4 is the supplier device package value. The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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