Fairchild Semiconductor FQNL2N50BTA
Product Information
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3.7V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 10 V
Rds On (Max) @ Id, Vgs:
5.3Ohm @ 175mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Power Dissipation (Max):
1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
230 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-92-3
Current - Continuous Drain (Id) @ 25°C:
350mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQNL2
ECCN:
EAR99
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Yes. We ship FQNL2N50BTA Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQNL2N50BTA. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3.7v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body (formed leads). The maximum gate charge and given voltages include 8 nc @ 10 v. It has a maximum Rds On and voltage of 5.3ohm @ 175ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 1.5w (tc). The product's input capacitance at maximum includes 230 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-92-3 is the supplier device package value. The continuous current drain at 25°C is 350ma (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqnl2, a base product number of the product. The product is designated with the ear99 code number.
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