Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
3.7 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
365 pF@ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
31 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
62.5 W
Series:
UniFET
Maximum Gate Source Voltage:
±25 V
Height:
2.39mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.75 Ω
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.75Ohm @ 1.85A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±25V
Power Dissipation (Max):
62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
485 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UniFET-II™
Supplier Device Package:
TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25°C:
3.7A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
