Fairchild FDB2532 N-channel MOSFET, 79 A, 150 V, 3-Pin TO-263AB
Product Information
Category:
Power MOSFET
Dimensions:
10.67 x 11.33 x 4.83mm
Maximum Continuous Drain Current:
79 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
82 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5870 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
39 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
310 W
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
48 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
107 nC @ 10 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 33A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Power Dissipation (Max):
310W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5870 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
D2PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta), 79A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB253
ECCN:
EAR99
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This is Fairchild N-channel MOSFET 79 A 150 V 3-Pin TO-263AB manufactured by Fairchild Semiconductor. The manufacturer part number is FDB2532. It is of power mosfet category . The given dimensions of the product include 10.67 x 11.33 x 4.83mm. While 79 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.33mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The package is a sort of to-263ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 82 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5870 pf@ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 39 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 310 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.83mm. In addition, it has a typical 16 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 48 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 107 nc @ 10 v. It has a maximum Rds On and voltage of 16mohm @ 33a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in bulk package . The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 310w (tc). The product's input capacitance at maximum includes 5870 pf @ 25 v. The product powertrench®, is a highly preferred choice for users. d2pak (to-263) is the supplier device package value. The continuous current drain at 25°C is 8a (ta), 79a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdb253, a base product number of the product. The product is designated with the ear99 code number.
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