Fairchild Semiconductor FQD13N10LTM
Product Information
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 5 V
Rds On (Max) @ Id, Vgs:
180mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.5W (Ta), 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
520 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship FQD13N10LTM Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQD13N10LTM. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 12 nc @ 5 v. It has a maximum Rds On and voltage of 180mohm @ 5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 2.5w (ta), 40w (tc). The product's input capacitance at maximum includes 520 pf @ 25 v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. to-252, (d-pak) is the supplier device package value. The continuous current drain at 25°C is 10a (tc). This product use mosfet (metal oxide) technology.
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