Category:
Power MOSFET
Dimensions:
2.92 x 1.3 x 0.93mm
Maximum Continuous Drain Current:
120 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.22 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
11 pF@ 10 V
Length:
2.92mm
Pin Count:
3
Typical Turn-Off Delay Time:
9 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.35 W
Maximum Gate Source Voltage:
8 V
Height:
0.93mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10 Ω
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.31 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
10Ohm @ 200mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
-8V
Power Dissipation (Max):
350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
11000 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23
Current - Continuous Drain (Id) @ 25°C:
120mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDV30
This is Fairchild P-channel MOSFET 120 mA 25 V 3-Pin SOT-23 manufactured by Fairchild Semiconductor. The manufacturer part number is FDV302P. It is of power mosfet category . The given dimensions of the product include 2.92 x 1.3 x 0.93mm. While 120 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.65v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.22 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 11 pf@ 10 v . Its accurate length is 2.92mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 9 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.35 w maximum power dissipation. It features a maximum gate source voltage of 8 v. In addition, the height is 0.93mm. In addition, it has a typical 5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 10 ω maximum drain source resistance. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum gate charge and given voltages include 0.31 nc @ 4.5 v. It has a maximum Rds On and voltage of 10ohm @ 200ma, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 4.5v. It is shipped in bulk package . The product has a 25 v drain to source voltage. The maximum Vgs rate is -8v. The product carries maximum power dissipation 350mw (ta). The product's input capacitance at maximum includes 11000 pf @ 10 v. sot-23 is the supplier device package value. The continuous current drain at 25°C is 120ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdv30, a base product number of the product.
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