Fairchild Semiconductor FCPF1300N80ZYD

FCPF1300N80ZYD Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 400µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack, Formed Leads
Rds On (Max) @ Id, Vgs:
1.3Ohm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Power Dissipation (Max):
24W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
880 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-220F-3 (Y-Forming)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Fairchild Semiconductor. The manufacturer part number is FCPF1300N80ZYD. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 400µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack, formed leads. It has a maximum Rds On and voltage of 1.3ohm @ 2a, 10v. The maximum gate charge and given voltages include 21 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 800 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 24w (tc). The product's input capacitance at maximum includes 880 pf @ 100 v. The product is available in through hole configuration. The product superfet® ii, is a highly preferred choice for users. to-220f-3 (y-forming) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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