Category:
Power MOSFET
Dimensions:
10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
27 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1100 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
30 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.75 W
Maximum Gate Source Voltage:
±25 V
Height:
4.83mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
70 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Rds On (Max) @ Id, Vgs:
70mOhm @ 13.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±25V
Power Dissipation (Max):
3.75W (Ta), 120W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1400 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D2PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQB27
ECCN:
EAR99
