Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 9.4mm
Maximum Continuous Drain Current:
9 A
Width:
4.83mm
Maximum Drain Source Voltage:
75 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
1857 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
28 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
135 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
9.4mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
16 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
16mOhm @ 58A, 10V
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/13462983
Package:
Bulk
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Power Dissipation (Max):
135W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1857 pF @ 25 V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
9A (Ta), 58A (Tc)
ECCN:
EAR99
Technology:
MOSFET (Metal Oxide)
edacadModel:
FDP16AN08A0 Models
