Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
1.9 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
180 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
24 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
44 W
Series:
QFET
Maximum Gate Source Voltage:
±30 V
Height:
2.39mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.7 Ω
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.7Ohm @ 950mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Power Dissipation (Max):
2.5W (Ta), 44W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
235 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25°C:
1.9A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
