Fairchild FDU7N60NZTU N-channel MOSFET, 5.5 A, 600 V UniFET, 3-Pin IPAK
Product Information
Dimensions:
6.8 x 2.5 x 7.57mm
Maximum Continuous Drain Current:
5.5 A
Transistor Material:
Si
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
550 pF@ 25 V
Length:
6.8mm
Pin Count:
3
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
90 W
Series:
UniFET
Maximum Gate Source Voltage:
±25 V
Height:
7.57mm
Typical Turn-On Delay Time:
17.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.25 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.25Ohm @ 2.75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Power Dissipation (Max):
90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
730 pF @ 25 V
Mounting Type:
Through Hole
Series:
UniFET-II™
Supplier Device Package:
I-PAK
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is Fairchild N-channel MOSFET 5.5 A 600 V UniFET 3-Pin IPAK manufactured by Fairchild Semiconductor. The manufacturer part number is FDU7N60NZTU. The given dimensions of the product include 6.8 x 2.5 x 7.57mm. While 5.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.5mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of ipak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 550 pf@ 25 v . Its accurate length is 6.8mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 40 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 90 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of ±25 v. In addition, the height is 7.57mm. In addition, it has a typical 17.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.25 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum gate charge and given voltages include 17 nc @ 10 v. It has a maximum Rds On and voltage of 1.25ohm @ 2.75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. The product carries maximum power dissipation 90w (tc). The product's input capacitance at maximum includes 730 pf @ 25 v. The product unifet-ii™, is a highly preferred choice for users. i-pak is the supplier device package value. The continuous current drain at 25°C is 5.5a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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