Category:
Power MOSFET
Dimensions:
2.92 x 1.4 x 0.94mm
Maximum Continuous Drain Current:
1.9 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.2 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
235 pF @ 10 V
Length:
2.92mm
Pin Count:
3
Typical Turn-Off Delay Time:
12 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Maximum Gate Source Voltage:
±20 V
Height:
0.94mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
600 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
5.9 nC @ 5 V
Rds On (Max) @ Id, Vgs:
60mOhm @ 2.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
235 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
1.9A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
