Renesas Electronics America RJK1003DPP-E0#T2
Product Information
Rds On (Max) @ Id, Vgs:
11mOhm @ 25A, 10V
Detailed Description:
N-Channel 100V 50A (Ta) 25W (Tc) Through Hole TO-220FP
Input Capacitance (Ciss) (Max) @ Vds:
4150pF @ 10V
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
59nC @ 10V
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Supplier Device Package:
TO-220FP
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
25W (Tc)
Current - Continuous Drain (Id) @ 25°C:
50A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship RJK1003DPP-E0#T2 Internationally to many countries around the world.
This is manufactured by Renesas Electronics America. The manufacturer part number is RJK1003DPP-E0#T2. It has a maximum Rds On and voltage of 11mohm @ 25a, 10v. It features n-channel 100v 50a (ta) 25w (tc) through hole to-220fp. The product's input capacitance at maximum includes 4150pf @ 10v. The product is available in through hole configuration. The maximum gate charge and given voltages include 59nc @ 10v. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. to-220fp is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 25w (tc). The continuous current drain at 25°C is 50a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
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