Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
120 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
188 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
4.82mm
Width:
15.75mm
Length:
10.28mm
Maximum Drain Source Resistance:
13 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
76 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
31 Weeks
Detailed Description:
N-Channel 100V 76A (Tc) 188W (Tc) Through Hole TO-220AB
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
NTP6410
Gate Charge (Qg) (Max) @ Vgs:
120nC @ 10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 76A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4500pF @ 25V
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
76A (Tc)
Customer Reference:
Power Dissipation (Max):
188W (Tc)
Technology:
MOSFET (Metal Oxide)
