Texas Instruments TPS1101DG4
Product Information
Manufacturer Standard Lead Time:
28 Weeks
Rds On (Max) @ Id, Vgs:
90 mOhm @ 2.5A, 10V
Detailed Description:
P-Channel 15V 2.3A (Ta) 791mW (Ta) Surface Mount 8-SOIC
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
15V
Vgs (Max):
+2V, -15V
Gate Charge (Qg) (Max) @ Vgs:
11.25nC @ 10V
Supplier Device Package:
8-SOIC
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 10V
Packaging:
Tube
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
P-Channel
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max):
791mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Texas Instruments
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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Yes. We ship TPS1101DG4 Internationally to many countries around the world.
This is manufactured by Texas Instruments. The manufacturer part number is TPS1101DG4. It has typical 28 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 90 mohm @ 2.5a, 10v. It features p-channel 15v 2.3a (ta) 791mw (ta) surface mount 8-soic. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has a 15v drain to source voltage. The maximum Vgs rate is +2v, -15v. The maximum gate charge and given voltages include 11.25nc @ 10v. 8-soic is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The product carries maximum power dissipation 791mw (ta). The continuous current drain at 25°C is 2.3a (ta). This product use mosfet (metal oxide) technology. The texas instruments's product offers user-desired applications.
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