Renesas Electronics America RJL6018DPK-00#T0
Product Information
Rds On (Max) @ Id, Vgs:
265mOhm @ 13.5A, 10V
Detailed Description:
N-Channel 600V 27A (Ta) 200W (Tc) Through Hole TO-3P
Input Capacitance (Ciss) (Max) @ Vds:
3830pF @ 25V
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
98nC @ 10V
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Supplier Device Package:
TO-3P
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Power Dissipation (Max):
200W (Tc)
Current - Continuous Drain (Id) @ 25°C:
27A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJL6018DPK-00#T0. It has a maximum Rds On and voltage of 265mohm @ 13.5a, 10v. It features n-channel 600v 27a (ta) 200w (tc) through hole to-3p. The product's input capacitance at maximum includes 3830pf @ 25v. The product is available in through hole configuration. The maximum gate charge and given voltages include 98nc @ 10v. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. to-3p is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-3p-3, sc-65-3. The product carries maximum power dissipation 200w (tc). The continuous current drain at 25°C is 27a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
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