Category:
Power MOSFET
Dimensions:
1.6 x 1.6 x 0.5mm
Maximum Continuous Drain Current:
5.2 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Maximum Drain Source Resistance:
39 mΩ
Package Type:
U-DFN1616
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.4 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
920 pF @ -15 V
Length:
1.6mm
Pin Count:
6
Typical Turn-Off Delay Time:
34.7 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.5mm
Typical Turn-On Delay Time:
7.2 ns
Minimum Operating Temperature:
-55 °C
Detailed Description:
P-Channel 20V 3.4A (Ta) 600mW (Ta) Surface Mount 6-UDFN (1.6x1.6)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerUFDFN
Base Part Number:
NTLUS3
Gate Charge (Qg) (Max) @ Vgs:
10.4nC @ 4.5V
Rds On (Max) @ Id, Vgs:
39mOhm @ 4A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
920pF @ 15V
Mounting Type:
Surface Mount
Series:
µCool™
Supplier Device Package:
6-UDFN (1.6x1.6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3.4A (Ta)
Customer Reference:
Power Dissipation (Max):
600mW (Ta)
Technology:
MOSFET (Metal Oxide)
