Maximum Drain Source Voltage:
1500 V
Typical Gate Charge @ Vgs:
114 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
78 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
24.7mm
Width:
5.7mm
Length:
15.7mm
Maximum Drain Source Resistance:
3 Ω
Package Type:
TO-3PF
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Forward Diode Voltage:
1.5V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NDUL09
Detailed Description:
N-Channel 1500V 9A (Ta) 3W (Ta), 78W (Tc) Through Hole TO-3PF-3
Input Capacitance (Ciss) (Max) @ Vds:
2025pF @ 30V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
1500V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
114nC @ 10V
Rds On (Max) @ Id, Vgs:
3Ohm @ 3A, 10V
Supplier Device Package:
TO-3PF-3
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3P-3 Full Pack
Power Dissipation (Max):
3W (Ta), 78W (Tc)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
