ON Semiconductor ECH8420-TL-H
Product Information
Category:
Power MOSFET
Dimensions:
2.9 x 2.3 x 0.9mm
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.3V
Maximum Drain Source Resistance:
22.5 mΩ
Package Type:
ECH
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
29 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2430 pF @ 10 V
Length:
2.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
210 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.9mm
Typical Turn-On Delay Time:
21 ns
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
ECH8420
Detailed Description:
N-Channel 20V 14A (Ta) 1.6W (Ta) Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
2430pF @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
6.8mOhm @ 7A, 4.5V
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 4.5V
Supplier Device Package:
8-ECH
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Operating Temperature:
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-SMD, Flat Lead
Power Dissipation (Max):
1.6W (Ta)
Current - Continuous Drain (Id) @ 25°C:
14A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is ECH8420-TL-H. It is of power mosfet category . The given dimensions of the product include 2.9 x 2.3 x 0.9mm. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.3mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.3v of maximum gate threshold voltage. It provides up to 22.5 mω maximum drain source resistance. The package is a sort of ech. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 29 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2430 pf @ 10 v . Its accurate length is 2.9mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 210 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.9mm. In addition, it has a typical 21 ns turn-on delay time . It has typical 2 weeks of manufacturer standard lead time. Base Part Number: ech8420. It features n-channel 20v 14a (ta) 1.6w (ta) surface mount 8-ech. The product's input capacitance at maximum includes 2430pf @ 10v. It has a maximum Rds On and voltage of 6.8mohm @ 7a, 4.5v. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The maximum gate charge and given voltages include 29nc @ 4.5v. 8-ech is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in 8-smd, flat lead. The product carries maximum power dissipation 1.6w (ta). The continuous current drain at 25°C is 14a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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