ON Semiconductor NTR4170NT1G
Product Information
Maximum Continuous Drain Current:
2.4 A
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.4V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.76 nC @ 4.5 V
Channel Type:
N
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
480 mW
Maximum Gate Source Voltage:
±12 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
110 mΩ
Manufacturer Standard Lead Time:
32 Weeks
Detailed Description:
N-Channel 30V 2.4A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
NTR417
Gate Charge (Qg) (Max) @ Vgs:
4.76nC @ 4.5V
Rds On (Max) @ Id, Vgs:
55mOhm @ 3.2A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
432pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.4A (Ta)
Customer Reference:
Power Dissipation (Max):
480mW (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is NTR4170NT1G. While 2.4 a of maximum continuous drain current. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.4v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.76 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.04mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 480 mw maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 1.01mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 110 mω maximum drain source resistance. It has typical 32 weeks of manufacturer standard lead time. It features n-channel 30v 2.4a (ta) 480mw (ta) surface mount sot-23-3 (to-236). The typical Vgs (th) (max) of the product is 1.4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: ntr417. The maximum gate charge and given voltages include 4.76nc @ 4.5v. It has a maximum Rds On and voltage of 55mohm @ 3.2a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 432pf @ 15v. sot-23-3 (to-236) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.4a (ta). The product carries maximum power dissipation 480mw (ta). This product use mosfet (metal oxide) technology.
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