Rohm Semiconductor RCD080N25TL

RCD080N25TL Rohm Semiconductor
RCD080N25TL
Rohm Semiconductor

Product Information

Base Part Number:
RCD080
Detailed Description:
N-Channel 250V 8A (Ta) 850mW (Ta), 20W (Tc) Surface Mount CPT3
Input Capacitance (Ciss) (Max) @ Vds:
1440pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
5V @ 1mA
Drain to Source Voltage (Vdss):
250V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 4A, 10V
Supplier Device Package:
CPT3
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
850mW (Ta), 20W (Tc)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RCD080N25TL. Base Part Number: rcd080. It features n-channel 250v 8a (ta) 850mw (ta), 20w (tc) surface mount cpt3. The product's input capacitance at maximum includes 1440pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has a 250v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 25nc @ 10v. It has a maximum Rds On and voltage of 300mohm @ 4a, 10v. cpt3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product carries maximum power dissipation 850mw (ta), 20w (tc). The continuous current drain at 25°C is 8a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RCD080N25(Datasheets)

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